摘要
介绍了一种在硅衬底上集成光电二极管探测器和双极接收放大处理电路的单芯片光电集成电路OEIC。从理论上阐述了光电器件实现的原理;为实现光电探测二极管与单片双极集成电路的兼容,设计了光电探测器的专用结构,并研制了光电探测器的专用模型。对接收处理电路进行了模拟仿真和优化设计。建立了与双极工艺兼容的制作光电二极管探测器的专用工艺;采用该工艺,对光电器件进行了版图设计、工艺制作和测试研究,给出了初步试验的方法和结果。
An Si-based monolithic optoelectronic integrated circuit （OEIC） was developed, in which a photodiode detector and a bipolar IC for receiving and amplifying are incorporated. For compatibility with the bipolar IC, a special structure of PIN photodetector was designed, and a specific model for PIN photodetector was developed. The receiver/ampifier circuit were simulated and optimized. A special fabrication process for photodiode detector was established, which is compatible with bipolar technology. Based on the new process, optical and electronic devices were designed, fabricated and tested. The method and results of the preliminary development are discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第6期767-769,773,共4页
Microelectronics
