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激光诱导液相电极腐蚀新方法 被引量:2

New method using electrodes in laser induced wet etching
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摘要 提出了一种激光诱导液相腐蚀新方法—电极腐蚀法。电极腐蚀法是指进行激光化学液相腐蚀时,在腐蚀溶液中添加电极,以吸引反应中间离子脱离基片表面,实现腐蚀的持续稳定进行。理论分析和实验结果都表明,电极腐蚀法可以有效地加快激光腐蚀的进程;吸附在基片表面的离子在电极作用下,快速迁移出基片表面,保证了基片表面腐蚀溶液构成的稳定,进而得到更加均匀的腐蚀表面;利用电流随腐蚀速率变化而变化的特点,使腐蚀速率和深度的直接监控转变为对腐蚀电流的间接控制,简化腐蚀控制方法。基于以上优点,电极腐蚀法可以克服现有激光腐蚀方法的诸多弊端,改善激光腐蚀性能,在特殊结构光电器件的制作和半导体的微细加工中具有广阔的应用前景。 A new method--laser-assisted wet electrode-etching is proposed, which appends electrodes in laser induced wet-chemical etching. The current in solution may impel the ion leaving the surface of substrate and make the etching processing steadily. After experiments, the laser etching process was effectively quickened by this method and the smooth etched surface was obtained. Furthermore, the etching velocity should be controlled indirectly by current in solution and the method to control etching can be simplified, because the current the current varies with the etching velocity. For all mentioned above, the new laser-assisted wet etching method can overcome the disadvantages of the conventional ones, improve the laser-etching performance and it will be useful in the area of special-structured optoelectronic devices' fabrication and semiconductor's minuteness machining.
出处 《光电工程》 EI CAS CSCD 北大核心 2006年第12期136-140,共5页 Opto-Electronic Engineering
基金 国家自然科学基金资助项目(60277008) 教育部重点项目(03147) 四川省科技厅资助课题(04GG021-020-01) 国防科技重点实验室基金项目(514910501005DZ0201)
关键词 激光诱导腐蚀 光电子 Ⅲ—Ⅴ族半导体 Laser induced etching Optoelectronics Ⅲ- Ⅴ semiconductor
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参考文献10

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同被引文献10

  • 1周月豪,柳海鹏,熊良才.激光诱导湿刻在微结构加工中的应用[J].激光与光电子学进展,2004,41(10):43-47. 被引量:3
  • 2张锋,王阳,徐文东.超分辨近场结构光刻技术[J].激光与光电子学进展,2003,40(9):25-29. 被引量:2
  • 3龚华平,吕志伟,林殿阳.激光束空间整形的研究现状[J].激光与光电子学进展,2005,42(9):2-5. 被引量:22
  • 4王沛,张斗国,唐麟,鲁拥华,焦小瑾,明海.超分辨近场结构之纳米光刻技术[J].量子电子学报,2005,22(6):840-843. 被引量:5
  • 5R. Khare, E. L. Hu. Dopant selective photoelectrochemical etching of GaAs homostructures [J]. Journal of the Electrochemical Society, 1991, 138(5):1516-1519
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  • 8Gregory T.A. Kovacs 著,张文栋等译.微传感器与微执行器全书[M].北京:科学出版社,2003:33~34
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  • 10张新宇,易新建,赵兴荣,麦志洪,何苗,刘鲁勤.微透镜阵列的离子束溅射刻蚀研究[J].光学精密工程,1997,5(5):63-68. 被引量:3

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