感应加热硅衬底上的金膜用于圆片键合(英文)

Induction heating of gold film on silicon substrate for wafer bonding

选用垂直于其表面的射频磁场对镀金膜的硅片进行了感应加热,由于磁场对材料加热具有选择性,感应热量首先作用于硅片上的金膜内,硅片先被传导加热到一定温度,然后被感应加热。理论上分析了该方法的可行性,初步试验结果表明,虽然金膜厚度低于感应趋肤深度,但在没有应用感应加热基座的情况下,几秒钟内就形成了金硅共晶相。另外,升温速度快,有效减少了加热过程中金对硅的扩散影响,该方法可广泛用于微系统封装中的圆片键合。

Induction heating of the gold film deposited on a silicon substrate in a radio - frequency magnetic field perpendicular to the film surface was demonstrated. Owing to electromagnetic field selective heating materials, the energy is first deposited in the gold portion and then the substrate is conductively and inductively heated. Theoretical analyses show the feasibility of this induction heating, and preliminary experimental results show that it takes only a few seconds to produce the gold - silicon eutectic phase, despite the fact that the thickness of the gold layer is less than a skin - layer depth and no additional susceptor is required. Moreover, the characteristic property of the method is that short process - time allows for minimal diffusion of the gold into silicon and this fast heating technique can be used for wafer bonding of microsystem packaging.