采用阳极氧化铝做掩膜生长氮化镓膜

Growing GaN film by using anodic aluminum oxide (AAO) mask

采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。采用扫描电镜观察了氮化镓膜的界面性质并用阴极发光谱表征了截面上氮化镓层在不同位置的的发光性质,发现随着厚度的增加,其发光特性得到改善,而且由于掩膜结构的引入,外延膜中的压应力得到一定程度的释放。

High quality GaN film was grown by hydride vapor phase epitaxy （HVPE） using porous AAO as mask. Scanning electron microscope （SEM） displays its cross -section morphology and cathode luminescence （CL） shows optical property at different positions of the as -grown layer. The optical property of GaN film improves with its thickness increasing. And the compressive stress in the GaN film is released by using AAO mask.