基于高电阻率衬底的Si/SiGe HBT(英文)

Si/SiGe HBT based on high resistivity substrate

介绍了一种基于电阻率高达1000Ω.cm的硅衬底的锗硅异质结晶体管的研制。首先根据衬底寄生参数模型分析了衬底对器件高频性能的影响,然后设计了器件的材料与横向结构尺寸,该器件采用掩埋金属自对准技术在3μm工艺线上制备而成,测得其典型直流电流增益为120,BVCEO为9.0V,fT为10.2GHz,fmax为5.3GHz,比同结构尺寸的常规N+衬底Si/SiGeHBT的fT和fmax分别高出3.9GHz和1.5GHz。

A new structure of SiGe HBT based on the high resistivity （ 1000Ω·cm ） Si substrate was presented. The influence of the substrate on high frequency performances was analyzed basing on the parasitic element equivalent circuit model, the material structure and fabrication procedure of the device were designed. The device was fabricated by the buried metal self - aligned technique in a 3 μm manufacture process line. The test results indicate that the DC gain is 120,BVCEO is 9.0V, the fT up to 10.2GHz and fmax achieve 5.3GHz. Compared to the conventional N^＋ substrate, the fT and fmax of SiGe HBT based on the high resistivity substrate have increased 3.9GHz and 1.5GHz respectively.