晶相形成对TiSi_2薄膜光学性能的影响

EFFECT OF CRYSTALLINE PHASE FORMATION ON OPTICAL PROPERTIES OF TiSi_2 THIN FILMS

通过常压CVD方法由SiH4和TiCl4直接在玻璃基板上成功制备了TiSi2薄膜，用XRD、FESEM、四探针测阻仪和分光光度计研究了薄膜的结构、形貌、电学和光学性能。研究表明TiSi2薄膜的晶相是面心正交刊TiSi2；薄膜的电阻率直接由晶相的形成决定，受晶相颗粒大小和晶相致密度控制，TiSi2薄膜的电阻率随薄膜中TiSi2晶相含量的增大而下降。TiSi2薄膜在400—750nm范围的可见光区具有大致相同的透射比和最小的反射比，薄膜的透射比随薄膜厚度的增加而减小。在大于750nm的红外区，薄膜电阻率越小，对红外辐射的反射比越高，且随着波长增加至25000nm，TiSi2薄膜的反射比逐渐上升到约0．95。

Titanium silicide （TiSi2） films were prepared on glass substrate by atmospherical pressure chemical vapor deposition using SiH4 and TiCl4 as the precursors. The phase structure of the thin films was identified by XRD, the surface morphology and thickness of the thin films were observed by FESEM, and the sheet resistance and optical behaviors of the thin films were measured by the four-point-probes and Spectrometer, respectively. The results show that TiSi2 thin films with the face-centered orthorhombic structure are formed on glass. The content of the TiSi2 crystalline phase is under the control of the particle size and the density of TiSi： crystalline phase. With the increase in the content of the TiSi2 crystalline phase, the resistivity of the TiSi2 thin films decreases. The TiSi2 thin films have the same transmittance and minimum reflectance between 400nm and 750um. The transmittance of TiSi2 thin films decreases with the increase in thickness. The IR-reflectance of the thin films increases with the decrease of the resistivity of the thin films. The IR-reflectance of the thin films increase to about 0.95 with increasing light wavelength to 25000nm.