Fe膜硫化合成不同厚度的FeS_2薄膜组织结构与电学性能

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF FeS_2 THIN FILMS SULFURATED FROM THE IRON FILMS WITH DIFFERENT THICKNESS

对热蒸镀的不同厚度纯Fe膜进行硫化处理，制备了厚度在70～600nm范围内变化的FeS2薄膜，研究了薄膜厚度对FeS2薄膜组织结构和电学性能的影响。结果表明，虽然不同厚度的FeS2薄膜晶格点阵畸变度不同，但晶粒均较为细小。较厚的薄膜表面更为平整并且组织更为均匀。随薄膜厚度增加，载流子浓度下降而迁移率上升。当膜厚超过400nm后，载流子浓度上升而迁移率下降。在膜厚约为130nm时，电导率出现极大值。

The FeS2 thin films with the thickness from 70nm to 600nm were prepared by sulfurizing the evaporated Fe films with different thickness. The effect of the film thickness on the microstructure and electrical properties was investigated. The results show that the FeS2 films with different thickness have various levels of crystal lattice distortion but fine crystallites. The thicker films show a smoother surface and more uniform rnicrostrueture than the thinner films. The carrier concentration decreases while the carrier mobility increases with increasing in film thickness until 400nm. Furthermore, the carrier concentration increases while the canqer mobility decreases as film thickness is over 400nm. There exists a maximum electrical conductivity at the film thickness about 130nm.