氧化镍纳米线的制备及光电性能研究

Preparation and photoelectric property of nickel oxide nanowires

通过电沉积法在阳极氧化铝(AAO)模板内制备了镍纳米线,然后在800℃下氧化8h得到NiO纳米线。利用X射线衍射(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)对NiO纳米线的组成、结构和形貌进行了表征,并测试了NiO/AAO阵列体系的光电压。测试结果表明:NiO纳米线为面心立方结构,平均晶粒尺寸为50nm,纳米线直径约90nm,与模板孔径相当;长度约为25μm,并受镍纳米线沉积时间的影响;在紫外灯(365nm)照射下,40V比60VNiO/AAO阵列体系的光电压大。

Nickel oxide nanowires were prepared by means of oxiding nickel nanowires at 800℃ for 8 h, and the nickel nanowires were firstly electrodeposited in AAO template. The composition, structure and morphology of the nanowire were characterized respectively with X-ray diffraction （ XRD）, atomic force microscopy （ AFM ） and scanning electron microscopy （SEM）. The photo potential of NiO/AAO array system was also measured. XRD results indicate that the NiO nanowire has a face-cubic structure and its average crystal size is about 50 nm. According to SEM, the diameter of the NiO nanowires is about 90 nm, equivalent to the diameter of template pores; their length is about 25μm, depending on the electrodeposition time of nickel nanowires. The photo potential of 40 V-NiO/AAO array system is higher than that of 60 V-NiO/AAO array system under ultraviolet light with 365 nm wavelength.