期刊文献+

钛酸锶钡粉体晶化过程和物相结构研究 被引量:2

Crystalline procedure and phase structure of BST powders
下载PDF
导出
摘要 应用传统陶瓷制备工艺制备出Ba0.6Sr0.4TiO3(BST)粉体,在600—1140℃范围内对粉体按不同温度煅烧,用X射线衍射分析各煅烧温度下制备出粉体的物相结构,用TG/DTA研究了粉体在煅烧过程中的晶化过程.实验结果表明:粉体在600-900℃煅烧过程中出现3个不同的中间相,900℃附近这些中间相基本消失,BST钙钛矿相开始形成,经过1000℃煅烧2.5h,BST粉体已经显示为完全的钙钛矿相,其晶格常数a和c分别为0.3974mm和0.3984mm,晶胞体积为0.0629nm^3.随着煅烧温度的升高,粉体的晶格常数和晶胞体积逐渐减小. The Ba0.6Sr0.4TiO3(BST) powder was prepared by traditional ceramic processing and calcined at different temperatures between 600 ℃ to 1 140 %, The phase structure of BST powders was analyzed by X - ray diffraction (XRD), and the crystalline procedure of BST powders during calcining was researched by TG/DTA. The results showed that three different intermediate phases of powders appeared during calcined at 600 - 900 ℃, When the temperature increased to around 900 ℃, these phases were basically disappeared and the perovskite BST began to form. After calcined at 1 000 ℃ for 2.5 h, BST powder was absolute perovskite phase, the lattice constants a and c were 0.3974 nm and 0.3984 nm, respectively, and the unit cell volume was 0. 0629 nm^3. As the calcining temperature increased, lattice constants and unit cell volumes decreased gradually.
出处 《湖北大学学报(自然科学版)》 CAS 北大核心 2006年第4期364-367,共4页 Journal of Hubei University:Natural Science
基金 国家自然科学基金项目(50372017/E0204)资助课题
关键词 钛酸锶钡 晶化过程 物相结构 晶格常数 Ba0.6Sr0.4TiO3 crystalline procedure phase structure lattice constant
  • 相关文献

参考文献10

  • 1Ezhilvalavan S,Tseng T.Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs[J].Review Materials Chemistry and Physics,2000,65:227-248.
  • 2Yang G,Gu H,Zhu J,et al.The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition[J].Journal of Crystal Growth,2002,242:172-176.
  • 3Su B,Button T W.The processing and properties of barium strontium titanate thick films for use in frequency agile microwave circuit applications[J].Journal of European Ceramic Society,2001,21:2 641-2 645.
  • 4Agarwal S,Sharma G L.Humidity sensing properties of (Ba,Sr)TiO3 thin films grown by hydrothermal-electrochemical method[J].Sensors and Actuators,2002,85:205-211.
  • 5Guo H L,Gao W,Yoo J.The effect of sintering on the properties of Ba0.7Sr0.3TiO3 ferroelectric films produced by electrophoretic deposition[J].Materials Letters,2004,58:1 387 -1 391.
  • 6Chen X F,Lu W Q,Zhu W G,et al.Structure and thermal analyses on phase evolution of sol-gel (Ba,Sr)TiO3 thin films[J].Surface and Coatings Technology,2003,167:203-206.
  • 7叶扬,丁爱丽,唐新桂,罗维根.Ba_(0.7)Sr_(0.3)TiO_3薄膜的制备、结构及性能研究[J].无机材料学报,2002,17(1):125-130. 被引量:13
  • 8陆清芳,李德红,何世明,刘兴钊,李言荣.BST铁电薄膜压控微波器件[J].电子元件与材料,2003,22(12):36-38. 被引量:4
  • 9Choi Y C,Lee B S.Bottom electrode dependence of the properties of (Ba,Sr)TiO3 thin film capacitors[J].Materials Chemistry and Physics,1999,61:124-129.
  • 10Liang X F,Wu W B,Meng Z Y.Dielectric and tunable characteristics of barium strontium titanate modified with Al2O3 addition[J].Materials Science and Engineering,2003,B99:366-369.

二级参考文献15

  • 1[1]Horwitz J S, Chang W, Carter A C, et al. Structure/property relationship in ferroelectric thin films for frequency agile microwave electronics [J]. Integrated Ferroelectr, 1998, 22: 799-809.
  • 2[2]Wu H D, Barnes F S. Doped Ba0.6Sr0.4TiO3 thin films for microwave device applications at room temperature [J]. Integrated Ferroelectr, 1998, 22: 811-825.
  • 3[3]Pond J M, Kirchoefer W, Chang W, et al. Microwave properties of ferroelectric thin films [J]. Integrated Ferroelectr, 1998, 22: 837-848.
  • 4[4]Kozyrev A B, Oldatenko O I, Samoilova T B, et al. Response time and power handling capability of tunable microwave devices using ferroelectric films [J]. Integrated Ferroelectr, 1998, 22: 849-860.
  • 5[5]Kirchoefer S W, Pond J M, Carter A C, et al. Microwave properties of Sr0.5Ba0.5TiO3 thin film interdigital capacitors [J]. Microwave Opt Technol Lett, 1998, 18: 168-171.
  • 6[6]Banieki J D, Laibowitz R B, Shaw T M, et al. Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1MHz to 20 GHz [J]. Appl Phys Lett, 1998, 72(4): 498-500.
  • 7[7]Kim W J, Chang W, Cadri S B, et al. Microwave properties of tetragonal distorted (Ba0.5Sr0.5)TiO3 thin films [J]. Appl Phys Lett, 2000, 76(9): 1185-1187.
  • 8[8]Chang W, Horwitz J S, Carter A C. The effect of annealing on microwave properties of Ba0.5Sr0.5TiO3 thin films [J]. Appl Phys Lett, 1999, 74(7): 1033-1035.
  • 9[9]Findikoglu A T, Jia Q X, Wu X D, et al. Tunable and adaptive bandpass filter using a nonlinear dielectric thin film of SrTiO3 [J]. Appl Phys Lett, 1996, 68: 1651-1653.
  • 10[10]Kozyrev A, Ivanov A, Keis V, et al. Ferroelectric films: nonlinear properties and application in microwave devices [J]. IEEE MTT-S Digest, 1998, 985.

共引文献15

同被引文献33

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部