摘要
本文首次提出并采用NaOH+H_2O_2的混合溶液作为SiO气体的吸收液,用硅钼兰分光光度法进行检测分析。结果表明,Si_3N_4粉末在高温下的低氧分压(Po_2≤10Pa)气氛中氧化时有SiO气体生成。其中当温度为1300℃时,在氧分压为1Pa～10Pa的N_2气氛中氧化时,生成SiO气体的氧化反应占Si_3N_4总的氧化反应的70～80％。同时,通过热力学计算对Si_3N_4粉末氧化生成SiO进行了分析,揭示了Si_3N_4的氧化反应方式与氧分压和温度的相互关系。
Author first presents and uses NaOH and H2O2 mixed solution as absorbent of SiO gas. The SiO gas content is analyzed by silicon molybdenum blue spectrophotometer method. The results show that SiO gas is found when Si3N4 is oxidized under low oxygen partial pressure (Po2<10Pa)at high temperature. SiO gas oxidation reaction is about 70%-80% of total Si3N4 oxidation reaction at 1300℃ under Nitrogen atmosphere (Po2=l-10Pa). Furthermore, author proves the relation between the mode of Si3N4 powder oxidation with oxygen partial pressure and temperature by thermodynamically analyzing.
出处
《现代技术陶瓷》
CAS
1996年第3期23-26,共4页
Advanced Ceramics
