采用PVA方法制备ZnO基发光稀磁半导体

ZnO Based Luminous and Diluted Magnetic Semiconductors Prepared by PVA Methods

不同的制备工艺对ZnO薄膜的微结构和性能有很大的影响,为了得到成本较低,样品具有较好特性的实验方法,对于制备手段进行了探索。使用PVA溶胶-凝胶法制备了Zn0.88Co0.12O薄膜,研究了不同退火工艺对其微结构的影响。对于Zn0.88Co0.12O样品的微结构和室温下的铁磁性和发光特性,具体比较分析了产生原因。对比了Co掺杂和复合Co、Fe掺杂Zn0.88(Co0.5Fe0.5)0.12O样品的微结构,采用振动样品磁强计(VSM)测量了样品的磁特性,发现单一掺杂的薄膜具有更好的晶体质量和更强的磁性。

The different preparation method has tremendous influence on the microstructure and the performance of ZnO-hased thin films. The exploration of new method which made low cost and high quality sample seems to he very important now. Considering the practical application, searching a higher Curie temperature thin magnetic semiconductor material also has an important value. Using PVA method, the Co^2＋ and Fe^3＋ ions doped ZnO diluted magnetic semiconductor thin films were prepared. This method which has many advantages：such as simple operation, short sample preparation time, low cost, may conveniently be used to prepare big area semiconductor thin film. At the same time, PVA method can be used to prepare uniform and high purity sample, also has advantageous for the doping control. The structure of Zn0.88 Co0.12O thin films under different annealing time and its photoluminescence were investigated. Different preparation conditions will influence on the microstructure, ferromagnetism and photoluminescence of samples obviously. Using PVA method we prepared the Zn0.88Co0.12O sample which has obviously （002） orientation. We also analyzed the origin of the ultraviolet peak and the blue light peak. Using vibrating sample magnetometer （ VSM ） we found that both Zn0.88 Co0.20 and Zn0.88 （ Co0.5 Fe0.5 ） 0.12 O thin films have ferromagnetism at room temperature, and the Zn0.88 Co0.20 thin film has higher ferromagnetic intensity than that of the Zn0.88 （Co0.5Fe0.5 ）0.12 thin film. Through the structure analysis and the computation, we confinned that the magnetic ions entered into the ZnO crystal structure indeed.