摘要
对Ｓｉ—ＦＥＡ冷发射微阴极阵列的微电子工艺技术制各方案及其测试观察结果进行了技术报道。已经获得了２０×２０／１００×１００硅尖锥阵列和栅压在１００～４００ｖ之间５０μＡ冷发射阳极电流。
The special procedured to fabricate arrays of Si field emitters and exprimen tal results arereported in detail. The arrays with 20 × 20 and 100 × 100 tips are presented,meanwhilc total emitted anodecurrent up to 50 μA is btlained saing gate electrode potentials from 100 to 400 V.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1996年第6期614-616,共3页
Journal of University of Electronic Science and Technology of China
基金
国防科工委预研基金
