摘要
本文采用SiO2作锥尖的塑模,再利用塑模制备出场发射金属尖阴极阵列,并给出SEM金属尖照片,分析了工艺因素对金属尖的影响。
This paper uses SiO 2 for the cusp molding technology and then the metal tip cathode arrays for the field emission are fabricated. The SEM photographs are presented and the influence of the technology factors on the metal tip are analized.
出处
《电子器件》
CAS
1996年第4期235-238,共4页
Chinese Journal of Electron Devices
关键词
场发射
真空微电子器件
金属阴极锥尖
field emission, metal tip, SiO 2 for the cusp molding technology