摘要
运用反应磁控溅射技术制备了应用于Gb级DRAM中的TiO2薄膜。本文报道了对该薄膜进行X射线衍射结构分析所得到的详细结果。
TiO 2 thin films were prepared by reactive magnetron sputtering for gigabit (Gb) range DRAM applications. Their structures were studied by X-ray diffraction (XRD) in detail. The relation between the crystalline structure and the annealing conditions of TiO 2 films was described.
出处
《电子器件》
CAS
1996年第4期272-276,共5页
Chinese Journal of Electron Devices