化学溶液分解法制备Sm_(0.5)Bi_(3.5)Ti_3O_(12)铁电薄膜

Study of Sm_(0.5)Bi_(3.5)Ti_3O_(12) Ferroelectric Thin Films Prepared on Si by Chemical Solution Deposition

采用化学溶液分解法(CSD)在S i衬底上制备了Sm0.5B i3.5Ti3O12(SmBT0.5)薄膜。用X射线衍射技术分析了薄膜的结构和结晶性,用原子力显微镜描述了薄膜的表面形貌;并研究了薄膜的存储性以及介电性能。结果表明,在700℃下退火1h得到了结晶性较好,表面致密的多晶薄膜。该薄膜显示了良好铁电和介电性能。

Sm0.5Bi3.5Ti3O12 thin films have been grown on Si substrates by a chemical solution deposition method. The structural characteristic and crystallization of the films were examined by X-ray diffraction （XRD）. The surface morphology of the films was observed by an atomic force microscopy （AFM）. The memory effect and dielectric properties of the films were also investigated. It can be found that the films deposited at the temperature of 700℃ forlh exhibit good ferroelectric and dielectric propreties.