半导体薄膜材料外延生长的蒙特卡罗模拟

Monte Carlo Simulation of Epitaxial Growth on Semiconductor Film Material

半导体自组织生长量子点是一种新型半导体材料,它在纳米电子学、光电子学和生命科学中有广泛的应用前景,本文讨论了计算机模拟量子点的生长在材料设计中的重要意义,建立动力学蒙特卡罗二维模型,通过获得的原子沉积的表面图样和对原子簇大小分布的数学统计,得到提高生长温度或者降低沉积速率等量子点外延生长的优化条件。

Much of recent interest has focused on self-growth quantum dots as the hold potential for numerous technological applications. In this thesis, the Kinetic Monte Carlo simulations are applied on the study of film epitaxial growth. From the island morphologies figures and the islands sizes distribution statistic figures, we can see that the optimize growth condition are found to have strong dependence on these factors, such as decrease deposition flux, increase lateral nearest neighbor atom term or increase temperature.