摘要
本文介绍了液相外延技术在制备硅材料、碲镉汞材料、石榴石型单晶材料、III-V族半导体材料和其他一些无机材料方面的应用,简述了液相外延技术近十多年来在系统改善、工艺改进和相关理论研究方面的成果,并指出了液相外延技术相对于其他外延技术的优势及其发展需要克服的困难。
In this paper, the application of liquid phase epitaxy （LPE） technology in the preparation of such materials as silicon, HgCdTe, single-crystal garnet film, Ⅲ-Ⅴ semiconductor material, et. al, are discussed respectively. Research progresses in improving the growth system and ameliorating the techniques in recent years are reviewed. The advantages of LPE over other epitaxial growing methods are discussed and the technical obstacles are pointed out.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第6期1307-1312,共6页
Journal of Synthetic Crystals
关键词
液相外延
系统
研究进展
liquid phase epitaxy
growth system
research progresses
