摘要
用ＭＯＣＶＤ方法制备ＺｎＳ：Ｍｎ交流薄膜电致发光显示器赵丽娟，钟国柱，杨宝钧，郑陈玮，赵国璋（中国科学院长春物理研究所１３００２１）（中国科学院激发态物理开放实验室）Ｚｎ：ＭｎＡｌｔｅｒｎａｔｉｖｅＣｕｒｒｅｎｔＴｈｉｎＦｉｌｍＥｌｅｃｔｒｏｌｕｍｉ...
The structure of ZnS.Mn thin films, which are fabricated by MOCVD, is cubic phase that the main peak is (111). Mn distribution is uniform. The relation between Mn doped-concentration and experimental parameters is researched. The device of ZDS:Mn ACTFEL of double-insulating strcture is prepared. Its brightness is higher than 1000cd / m2and efficiency is near 1.48lm / w.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
1996年第5期263-267,共5页
Journal of Optoelectronics·Laser
基金
国家自然科学基金
国科学激发态物理开放实验室基金
