生长温度对Si衬底ZnO薄膜结构的影响

Studies on Structural Characteristics of ZnO Thin Films Grown on Si(111) Substrate at Various Growth Temperature

通过脉冲激光沉积方法在1.3Pa氧氛围,100-500℃衬底温度,Si(111)衬底上成功地制备了ZnO薄膜,我们用X射线衍射(XRD)谱,原子力显微镜(AFM),透射电镜(TEM)对其表面形貌和结构进行了测试和分析。通过测试分析得知,这些ZnO薄膜在生长温度400℃时能够获得较好的晶体结构,薄膜表面平整,晶粒均匀。

The ZnO thin films have been fabricated on Si （ 111 ） substmte by pulsed laser deposition at growth temperature from 100 ℃ to 500 ℃ at a oxygen ambient pressure of 1.3 Pa. The structural characteristics of ZnO thin films were characterized by X - Ray diffraction （XRD） spectra, the atomic force microscopy （AFM） observations,and the transmission electron microscopy （TEM） observations. The resuits of the XRD spectra and the TEM observations show that the crystalline film with better structure can be obtained at growth temperature of 400%. The result of the AFM observations shows that the thin film grown at 400 ℃ has the most smooth surface and the homogeneous crystal grains.