纳电子器件的少电子输运性质及应用

Few-electron Transport Characteristics and Applicationsof Nanoelectronic Devices

在介绍纳电子器件基本输运理论基础上,着重分析量子点结构器件模型,讨论了量子点上能级分立和电子填充的各种情况,以及电子自旋的影响,特别强调了纳米限制系统中局域态电子和非局域态电子相互作用特征。综述了目前纳电子器件的研究进展及其应用。

Basic transport theory of nanoelectronic devices is firstly introduced, and then device models based on quantum-dot structure are analyzed. Discrete quantum levels and electron-filling states in quantum dots are discussed under different conditions, including the influence of electron-spin effects. Meanwhile, special emphasis is focused on the characteristics of coupling between localized electrons and deloealized electrons in nanometer confined system. Finaly, we summarize the research achievements and applications of nanoelectronic devices.