用DTPDO研究超薄栅氧化层的诱生缺陷

A Study of Stress-induced Traps in Ultra-thin Oxide Using DTPDO

应用直接隧道比例差分(DTPDO)谱技术研究了深亚微米MOS器件超薄栅氧化层的应力诱生缺陷。实验结果发现超薄栅氧化层直接隧道栅电流的比例差分谱存在明显的三个谱峰。这意味着在超薄栅氧化层退化的过程中有三种氧化层高场诱生缺陷共存。研究结果表明,三种缺陷的饱和缺陷密度均随着应力电压和应力温度的增加而增加。三种缺陷的特征产生时间常数与器件的实验温度、所加的应力电压和氧化层的失效时间相关。

In this paper, stress-induced traps in ultra-thin oxide were studied using DTPDO technique. It＇s observed that three obvious spectrum peaks coexist in the proportional differential spectroscopy of direct tunneling gate current. This means three kinds of traps were generated during the degradation of ultra-thin oxide. It＇s shown that the saturation density increases with stress voltage and temperature for the three defects. It＇s also shown that the defect generation time constant was related to the experimental temperature, stress voltage and the failure time of oxide.