静态随机存储器数据残留特性研究

The Characteristic Study of Data Remanence of SRAM

通常在安全处理系统中,微处理都将密钥储存在静态随机存储器(SRAM)中,如果SRAM的数据在断电后确实完全丢失,那么采取这样的对策是非常安全的,但是SRAM在断电后存在数据残留的问题,是系统的一个重大安全隐患。针对信息系统的安全性,用实验方法进行了SRAM数据残留特性的研究,确定了多种SRAM数据残留的临界温度点,建立了数据残留时间与温度的相关关系,进行了数据残留特性与电参数的相关分析,提取出数据残留特性的特征电参数待机电流Iddsb,有助于进一步研究SRAM数据残留机理。

Security processors typically store secret key material in static RAM, from which if power is removed the device is thoroughly tampered with. This strategy is very security, but there is the data remanence problem in SRAM, which is a serious potential trouble for information system. To improve the security of information system, the characteristic of data remancence of SRAM has been studied by experiment. The critical temperature of data remanenee of SRAM has been determined, the relationship between data remanence time and temperature has been built, the relationship between the characteristic of data remanence and electronic parameters has been analyzed, and the electronic characteristic parameter-standby current Iddsb has been extracted as well. All the study result is the base for advanced mechanism study and control of the data remanence of SRAM.