高特征温度应变量子阱激光器材料设计与生长

Materials Design and Grow of Strained Quantum Well Lasers with High Characteristic Temperature

为了解决半导体激光器在高温、高功率情况下工作时出现的阈值电流升高,波长飘移,发光效率下降等问题,设计并生长了一种具有高特征温度A lInGaAs/A lGaAs应变量子阱激光器。首先从理论上剖析影响半导体激光器特征温度的主要因素。分析了这四个因素与器件的材料和结构的关系。通过综合考虑各个因素,选用了A lInGaAs四元系统作为有源材料,优化设计出了高特征温度的半导体激光器结构,并用MBE设备生长这种结构,测试样品质量达到了设计要求。

To settle the problems that on the condition of high temperature and high power, threshold current of semiconductor lasers will rise, wavelength excursion will occur, radiation efficiency will descend and so on, and we have designed and grown AlInGaAs/A1GaAs strained layer quantum well lasers with high characteristic temperature. Firstly, we analyzed main factors in theory that influence the characteristic temperature semiconductor lasers. We have analyzed the relationship between the four factors and device materials. Through synthetically considering each factor, we chose AlInGaAs quaternion system as active layer material, and optimized to design High Characteristic Temperature semiconductor laser structure, and then we employed MBE facility to grow such structure. The quality of the simple has met the requirement of design.