摘要
利用低浓度掺杂-结深推移-高浓度掺杂设计方法形成Ga基区,制备出NPN晶体管样品。实验结果与理论分析表明:Ga的线性缓变分布和SiO2薄膜覆盖下的扩散,大幅度提高了器件耐压水平与综合电学性能;IC-VCE中的负阻效应是由Ga原子表面浓度经二次氧化变为耗尽状态所致,对此,可采用Si3N4/SiO2/Si复合结构加以改善;总之,开管扩镓是一种制备高压器件不可比拟的新途径。
Ga base region was formed using low concentration doping-junction depth process-high concentration doping method, and the NPN transistor sample was prepared. The experimental result and the theoretical analysis indicate that the linear slowacting distribution of Ga and diffusion under SiO2 film strongly heighten the withstand voltage level and all round electrical performance; negative-resistance effects in IC-VCE curve is caused by the concentration of Ga of the former surface becoming exhausted state by reoxidation. It can be improved with Si3N4/SiO2/Si composite structure; In brief, tube-open diffusion of Ga is a unexampled new approach to prepare high voltage device.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2006年第12期1884-1887,共4页
Rare Metal Materials and Engineering
基金
国家自然科学基金(69976019)
关键词
GA
浓度梯度
SIO2
器件耐压
负阻效应
Ga
concentration gradient
SiO2
device withstand voltage
dynatron effect
