摘要
ZnO薄膜是一种应用广泛的半导体材料.近几年来,随着对ZnO的光电性质及其在光电器件方面应用的开发研究,ZnO薄膜成为研究热点之一.制备掺杂的p型ZnO是形成同质p-n结以及实现其实际应用的重要途径.近来已在p型ZnO及其同质结发光二极管(LED s)研究方面取得了较大的进展.目前报道的p型ZnO薄膜的电阻率已降至10-3Ω.cm量级.得到了具有较好非线性伏安特性的ZnO同质p-n结和紫外发光LED.本文就其最新进展进行了综述.
As a wide-band semiconductor material, ZnO has been widely used for many applications. Recently, ZnO has attracted great attention to application of optoelectronic devices because of the notable properties. Growing p-type ZnO film is the key step for making ZnO homogeneous p - n junctions and its application. Both n - type and p - type ZnO will be required for development of homojunction light - emitting diodes （LEDs） and laser diodes （LDs）. The electrical resistivity is dropped to 10-311 ~ cm level now. ZnO homogeneous p - n junctions with good nonlinear I - V characteristics and ultra-violet emission have been reported in the literature. Recent research progresses on p - type ZnO films and related homogeneous p - n junctions are summarized in this paper.
出处
《材料科学与工艺》
EI
CAS
CSCD
北大核心
2006年第6期637-641,645,共6页
Materials Science and Technology
基金
国家自然科学基金资助项目(60244003)
湖北省新世纪高层次人才工程资助项目
