静电放电对2SC3356造成的潜在性失效的实验模拟

Experiment Simulation on Latent Failure of ESD on Microelectric Device 2SC3356

研究了低电压的静电放电(ESD)对微电子器件造成的潜在性失效.采用人体模型(HBM)对微波低噪声晶体管2SC3356施加了一系列低电压的ESD应力,结果表明:低于损伤阈值的ESD应力可以使微电子器件产生潜在性损伤,从而影响器件的使用寿命.

A latent failure study on the low-level electrostatic discharge （ESD） stresses on microelectric device is dealt with. A series of low-level ESD stresses are imposed on microwave low noise transistor 2SC3356 by using the human body model （HBM）. It is shown that ESD stresses,even at a level below the failure threshold, can impact the device lifetime by creating latent defects.