摘要
本文研究了一种新型的1.3μm InGaAsP/InP掩埋新月形(BC)激光器。采用两次液相外延(LPE)技术形成掩埋双異质结构(BH),p-n-p-n电流阻挡结构和窄有源区。该器件在室温连续工作条件下的阀值电流低达15mA、基横模、单面输出功率大于12mW。
This paper describes an InGaAsP/InP laser dicde emitting at 1.3μm wavelength with a buried crescent (BC) shaped active region.The buried heterostructure and p-n-p-n current confinement structure at both sides of the active region and a narrower active region are formed by a two-step liquid-phase epitaxy technique.A threshold current as low as 15 mA, fundamental transverse mode operation and output power more than 12 mW/facet in CW operation at room temperature areachreved.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1989年第1期78-82,共5页
Journal of University of Electronic Science and Technology of China
基金
国家自然科学基金
关键词
激光器
掩埋新月形
异质结构
laser
buried crescent
heterostructure
liquid-phase epitaxy
threshold current
furtdamental transverse mode
