摘要
Fluorinated amorphous carbon （a-C：F） films were deposited at room temperature using C4Fs and CH4 as precursor gases by electron cyclotron resonance chemical vapour deposition （ECR-CVD）. Chemical structures were analysed using X-ray photoelectron spectroscopy （XPS）. The current conduction shows ohmic behaviour and the leakage current increases with the content of C sp2 in the deposited a-C：F films at a low electric field. The behaviour of the leakage current is well e^plained by the Poole-Frankel mechanism at a high electric field. The interface traps, rather than chemical structures, of a-C：F films determine the PF emission current.
Fluorinated amorphous carbon （a-C：F） films were deposited at room temperature using C4Fs and CH4 as precursor gases by electron cyclotron resonance chemical vapour deposition （ECR-CVD）. Chemical structures were analysed using X-ray photoelectron spectroscopy （XPS）. The current conduction shows ohmic behaviour and the leakage current increases with the content of C sp2 in the deposited a-C：F films at a low electric field. The behaviour of the leakage current is well e^plained by the Poole-Frankel mechanism at a high electric field. The interface traps, rather than chemical structures, of a-C：F films determine the PF emission current.
基金
supported by the Key Laboratory Foundation of Electron Devices Reliability Physics and Applications(No.51433020205DZ01)
the Xi'an Applied Materials Innovation Fund(No.XA-AM-200501)
