摘要
对(Al,Ga)As/GaAs调制掺杂场效应晶体管MODFET进行了设计、研制与测试。利用国产分子束外延系统(MBE)获得的異质结材料,采用尚未报导的部分工艺,同时研制成功耗尽型、增强型的MODFET、直流跨导典型值在90-135mS/mm。对耗尽型MODFET进行了微波测试。在4GHz下,最小噪声系数为2.49dB,最大功率增益为10.2dB,在国内尚未见到类似报导。
The design, fabrication and measurement of modulation doped (Al, Ga)As/GaAs field effect transistor MODFET's are carried out. Utilizing the heterostructure material fabricated with the home-made molecular beam epitaxy system, both enhancement MODFET's and depletion MODFE T's are successfully obtained.The microwave characteristics of depletion MODFET's in the test show that the minimum noise firure is 2.49dB, and the maximum power gain 10.2dB at 4GHz.No announcement similar to the above stated results has yet been found in China.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1989年第1期88-94,共7页
Journal of University of Electronic Science and Technology of China
关键词
调制渗杂
场效应晶体管
砷化镓
gallium arsenide
field effect transistors
two dimensional electron gas
molecular beam epitaxy
modulation doped
