用作射频仿真的BSIM3v3改进模型

An Improved BSIM3v3 Model used for RF Simulation

该文介绍了BSIM3模型直流参数提取的过程以及在RF下模型的改进情况。首先简要介绍了BSIM3模型的发展情况,然后根据BSIM3用户手册,对BSIM3的一些直流参数进行了提取以及优化,同时给出了参数优化后的仿真曲线与测试曲线的对比。随着器件工作频率的提高,原有的模型不能满足电路设计精度的要求,该文对BSIM3模型进行了改进,增加了栅极电阻模拟分布传输线效应和非准静态效应;增加衬底电阻网络,减少高频情况下对Y12,Y22参数的影响;增加电感和电容模拟引线以及各极之间的寄生效应。最后给出了模型改进前后与测试的S参数的对比曲线。

The paper mainly introduce the DC parameter extraction process of BSIM3 model and the model improvement for RF simulation. First, we simply introduce the development of the BSIM3 model, and then we extract and optimize some DC parameters based on BSIM3 manual. At the same time, the paper provides the contrast between simulation and experiment. The BSIM3 can＇t model the MOSFET precisely when the frequency becomes higher and higher. So we extend the BSIM3 model by adding some parasitic components. For instance, we add the gate resistance in order to simulate the distributed transmission line affect and NQS affect. We can remove the influence to the Y12 and Y22 by adding substrate resistance components. Adding capacitance and inductance is to simulate the parasitic affect between any two poles. At the end of this paper, we provide the S parameter contrastive curves between simulation and measurement.