LED阵列的设计和制作工艺研究

Design and Fabrication of AlGaInP LED Array

根据Al GaInP外延片的结构特点设计了LED型微显示器件的主要结构。利用Markus-Christian Amann等人提出的模型对器件电流注入后的空间分布进行了简单的理论分析,总结出了像素元和上隔离沟槽的理想尺寸分别是16μm×16μm和2μm。简述了减薄GaAs衬底的作用,设计衬底电隔离沟槽宽度为5μm。采用湿法腐蚀工艺进行器件结构制备,利用不同的腐蚀剂对金属层、p-GaP层、Al GaInP层和n-GaAs衬底层进行腐蚀。实验结果表明,腐蚀后的沟槽形貌较好,其深度和宽度可以达到设计要求。

A kin.d of micro-LED array is designed in this paper. This device is based on AlGaInP epitaxial wafer. The theoretical analysis of injection current distribution based on the model developed by Markus-Christian Amann etc. is presented. It is concluded that the ideal dimension of the pels and top isolation groove width are 16 μm×16 μm and 2 μm, respectively. It is necessary for this device to decrease the GaAs substrate thickness. And the bottom isolation groove width is designed as 5 μm. The structure of isolation is fabricated by wet etching using both isotropic and anisotropic solvent. The result of the experiment shows that the procedure of isolation fabrication is feasible.