离子注入α-Si∶H肖特基势垒的研究

AN INVESTIGATION OF IONIC IMPLANTATION DOPED a-Si:H SCHOTTKY BARRIERS

本文采用辉光法和离子注入技术制备了五种不同结构的a-Si∶H肖特基势垒,测试了这些结构的电流—电压特性,计算了各种样品的势垒高度。结果表明:当a-Si∶H掺杂浓度足够大时,电流—电压关系将出现“反转”,提高a-Si∶H中的杂质浓度或在本征a-SI∶H中注入Zn+离子均可降低势垒高度;作者予言,掺入金属元素使a-Si∶H半金属化,可望进一步降低肖特基势垒高度。

In this paper, five kinds of a-Si:H Schottky barriers are fabricated by the glow discharge method and in the ionic implantation technology. The current voltage characteristics of these structures are also measured.According to the diffusion theory and thermionic emission theory, the barrier heights of the various samples are calculated respectively.It turns out that the current voltage relationship shows the〃 backward 〃 phenomenon when the impurity concentration in a-Si:H acheives a certain value. Moreover,the Schottk barrier heights can be reduced by increasing theyle impurity concentration in a-Si:H and implanting Zn+ ions into intrinsic, a-Si:H. It is predicted that the Schottky barrier heights can be largely decreased by doping metal elements to alloy a-Si:H.