Si亚微米MOSFET Monte carlo模拟中散射机制的研究

Study on Scattering Mechanism in Submiron Si MOSFET Monte Carlo Simulation

讨论了用Monte carlo法模拟半导Si内电子输运现象的散射机制,探讨并确定自由飞行时间的自散射方法,模拟电子在不同高场下的输运过程,并分析了速度过冲效应产生的原因.

In this article, the author discusses the electronics transport process scattering mechanism in Si,probe in the self-sacttering methord to confirm the free-flight motion time. Then,the author simulates the electronics transport process in different high electric field ,and analyses the reasons of electronic velocity overshoot effect.