单靶磁控溅射Cu1-xCrx（x=1．19～2．37）薄膜的制备

Preparation of Cu_(1-x)Cr_x(x=1.19-2.37) films by magnetron sputtering single target

利用简易合金靶材在Si（100）基底上单靶磁控溅射制备Cu1-xCrx（x=1．19～2．37，摩尔分数，％）薄膜。研究不同名义成分的合金靶材得到的溅射态薄膜的成分、电学性能、组织结构及表面状态。研究结果表明：利用简易合金靶材制备的Cu1-xCrx薄膜成分可控。Cr的加入增强了溅射态薄膜的（111）织构，且随着薄膜厚度的增加，（111）织构增强；855nm厚的Cu-2．37％Cr薄膜的（111）与（200）的峰强比高达8．48；合金元素Cr显著影响溅射态薄膜的表面状态（平整性和致密度）和电阻率；随着Cr含量的增加，前者呈现先升高后下降的趋势，而薄膜电阻增加；Cu-2．18％Cr薄膜由于应力增加局部产生微裂纹，薄膜连续性下降。并从薄膜生长动力学以及自由能的角度对上述结果进行了初步的阐述。

CU1-xCrx films（x= 1.19 -2.37, mole fraction, %） were deposited on the Si （100） substrate by magnetron sputtering using a single alloy target. The concentration, electrical resistivity, microstructure and morphology of films deposited by targets with different nominal Cr concentration were investigated. The results show that the concentrations of films are predictably. Cr intensifies the （111） texture which increases with increasing thickness of films. The peak strength ratio of （111） to （200） of Cu-2.37%Cr film with thickness of 855 nm is 8. 48. As the concentration of Cr increases, the smoothness and compactness of films increase firstly whereas then decrease subsequently, while the electrical resistivity keeps on increasing. The continuity of Cu-2.18%Cr film decreases due to the formation of micro-crack. These results are explained in the view of the dynamics of film growth and energy.