摘要
利用蒸发沉积系统制备了两种氧化物。SnO亚微米晶沉积生长到单晶硅、钠玻璃和石英玻璃衬底上,并通过控制样品的冷却速率,来研究亚微米晶团簇的特性。利用扫描电镜观测各种样品的表面形貌。当样品的冷却速率达到1 000℃/min时,在硅衬底表面上观察到从平衡生长到分形生长的突变现象。CdO亚微米晶沉积到硅衬底表面上,呈现了多种自组织生长的向日葵状结构。本文对氧化物的生长过程和表面形态的关系进行了讨论。
Abstract： Oxide deposits were produced in an evaporation-deposition system. Tin oxide submicron crystals were deposited on surfaces of silicon wafer, soda glass, and silica glass with different cooling rates, respectively. Various morphologies of the deposits were observed by scanning electron microscopy. A transient phenomenon from equilibrium growth to fractal growth was observed on the surface of silicon wafer cooled at a rate of 1000℃/min. Cadmium oxide submieron crystals were deposited on the surface of silicon wafer, and displayed numerous self-organizing sunflower-like structures. The relationship between growth and morphology of oxide deposits was discussed.
出处
《电子显微学报》
CAS
CSCD
2006年第6期481-484,共4页
Journal of Chinese Electron Microscopy Society
基金
清华大学基础研究基金资助项目(No.JC2001011)
关键词
氧化物凝聚
分形生长
自组织结构
oxide aggregation
fractal growth
self-organizing structure
