摘要
讨论了150 kHz等离子体中频电源的驱动与保护电路设计方案。该电路采用脉冲变压器耦合MOSFET管驱动电路,具有输出变压器原边平均电流和副边峰值电流的过流保护功能。结果表明:驱动波形的上升和下降时间都不超过80 ns,并能在检测到过流信号时封锁驱动信号,关断变换器中的开关器件,切断过流故障,有效进行电路保护。
This paper discusses the drive circuit and protection circuit design scheme of 150 k Hz. The circuit, with overcurrent protection of output transformer original side average current and side peak current,adopts pulse transformer coupling MOSFET driving circuit. Results show： rising and falling time of driving waveforms are no more than 80 ns. In addition,blocking driving signals while detecting over- current signals,turning off swiching device in the convertor, cutting off over - current thus fault, protecting circuit efficiently.
出处
《现代电子技术》
2007年第1期78-80,共3页
Modern Electronics Technique
基金
国家民委科研基金项目(05ZN03)
关键词
等离子体电源
中频
驱动电路
保护电路
plasma power supply
intermediate frequency
drive circuit
protection circuit
