从Si-C-N非晶粉末制备α-Si_3N_4纳米线

Preparation of α-Si_3N_4 Nanowires from Amorphous Si-C-N

以溶胶-凝胶法合成了Si-C-N非晶前驱体粉末，在不添加催化剂的条件下，通过高温还原氮化反应制备了α-Si3N。纳米线．用X射线衍射（XRD）、透射电镜（TEM）和扫描电镜（SEM）表征和分析了α-Si3N4纳米线．XRD分析表明，在所得产物中，除了未完全反应的非晶SiO2外，主要是α-SisNt，Si2N2O以及少量的β-SiC．TEM和SEM分析显示，合成的α-Si3N4纳米线直径为100～150nm，长几十μm，α-Si3N4纳米线的生长机制是气固（VS）生长机制。

α-Si3N4 nanowires were synthesized via a novel catalyst-free process of carbothermal reduction of amorphous Si-C-N gel. Microstructures and crystalline phase of the synthesized α-Si3N4 nanowires were characterized by XRD, TEM and SEM. XRD analysis show that besides unreacted amorphous SiO2, the product contained mainly α-Si3 N4 and Si2 N2 O with a minor component of β-SiC. TEM and SEM analysis show that α-Si3 N4 nanowires have the diameters in the range of 100- 150 nm and with the lengths extending to several tens of microns. A growth mechanism for nanowires is attributed to a solid-gas process.