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高k介质纳米MOSFET栅电流和电容模型

Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks
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摘要 介绍了一种纳米MOSFET(场效应管)栅电流和电容的统一模型,该模型基于Schr d inger-Poisson方程自洽全量子数值解,特别适用于高k栅介质和多层高k栅介质纳米MOSFET。运用该方法计算了各种结构和材料高k介质的MOSFET栅极电流,并进行了分析比较。模拟得出栅极电流和电容与实验结果符合。 A unified approach, particularly suitable for evaluation of high-k stack structures consisting of multiple layers of different dielectrics is presented. This approach is based on fully self-consistent solutions to the Schroe dinger-Poisson equations. Various structures and materials of high-k stacks of interest have been examined and compared to access the reduction of gate current in these structures. The results of gate current and capacitance obtained from our model are in very good agreement with experimental data.
作者 王伟 孙建平 顾宁
机构地区 南京邮电大学光电工程学院 美国密西根大学电气工程和计算机科学系 东南大学分子与生物分子电子学教育部重点实验室
出处 《南京邮电大学学报（自然科学版）》 EI 2006年第6期6-10,共5页 Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition
基金 国家自然科学基金(60371037)资助项目
关键词 高k 栅电流 量子模型 High-k Gate current Quantum-mechanical model
分类号 TN386 [电子电信—物理电子学]
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参考文献17

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南京邮电大学学报（自然科学版）
2006年 第6期

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