多晶硅与单晶硅的扩散比较

Diffusion Comparative Research on Multicrystalline and Singlecrystalline Silicon

相同工艺下多晶硅和单晶硅的扩散结果区别非常明显,在扩散温度较低时,多晶硅扩散后的方块电阻大于相同条件下的扩散单晶硅;在扩散温度较高时,多晶硅扩散后的方块电阻小于单晶硅,文章从多晶硅的结构特点对此现象进行了解释。

Diffuse result difference between polycrystalline and single--crystalline silicon under the same technology is apparent. With lower diffusion temperature, sheet resistivity of diffused multicrystalline silicon is large than the singlecrystalline silicon diffused at same condition; nevertheless, with higher diffusion temperature, the sheet resistivity of diffused multicrystalline silicon is small than the diffused singlecrystalline silicon＇ s. This article will give an interpretation of this phenomena from the character of the multicrystalline silicon structure.