TFT有源矩阵α－Si∶H薄膜PECVD淀积工艺研究

An Investigation into PECVD Process of α Si∶H Film for TFT Active Matrices

分析了α－Ｓｉ∶Ｈ薄膜的质量和厚度对α－Ｓｉ∶ＨＴＦＴ关键性指标的影响，深入、详细地讨论了其ＰＥＣＶＤ淀积工艺，并在实验的基础上确定了最佳淀积工艺参数。

Effects of the quality and thickness of α Si∶H films on the critical parameters of active matrix thin film transistors (AMTFT’s) are analyzed. The PECVD process for α Si∶H film is described in detail.Based on the experiment,optimal parameters for deposition have been obtained,and a high performance 75 mm α Si∶H TFT active matrix with 372×276 pixels has been fabricated.