低压大电流VDMOS器件栅电荷测量

Gate Charge Test for Low Voltage High Current Power VDMOS

为了更直观地描述低压大电流VDMOS器件特性,对器件栅电荷特性进行了测量和提取。通过栅电荷曲线(VGS-QG),能导出器件的电容特性,驱动电流大小及能量损耗等相关参数。分析了栅电荷测试电路基本原理,提出一种可行的测试电路,PSPICE仿真和实际电路测试证明了该电路的正确性。

In order to describe the characteristics of mainly focuses on VDMOS device more intuitively, this paper the gate charge test. From the gate charge curve （ VGS - QG ） obtained, such as the capacitances of the device, drive current requirements, so on. This paper introduces a feasible test circuit, cal circuit. , many parameters can be the power dissipation and which is proved valid by simulation and test in practical circuit.