期刊文献+

BaPbO_3导电薄膜的制备、结构及性能研究 被引量:7

Preparation, Microstructure, and Conductive Properties of BaPbO_2 Thin Films
下载PDF
导出
摘要 以可溶性无机盐为原料,EDTA、柠檬酸、酒石酸为复合螯合剂,水为溶剂,采用改进的溶胶-凝胶法制备了无裂纹、晶粒尺寸小且均匀分布的钙钛矿结构的BaPbO3导电薄膜.利用XRD、SEM和EDS表征方法结合薄膜方阻的测定,具体分析了Pb/Ba比和晶粒生长情况对BaPbO3薄膜导电性能的影响.实验结果表明: Pb/Ba比和晶粒生长情况是决定BaPbO3薄膜导电性的两个主要因素,Pb/Ba比的上升和晶粒的长大,都会提高BaPbO3薄膜的导电性能;热处理次数对BaPbO3薄膜方阻的影响与薄膜厚度有关.在700℃下保温10min的快速热处理方法,可以获得钙钛矿结构、薄膜方阻为5.86Ω·□-1的BaPbO3薄膜. Crackfree and small grain size perovskite-type ceramic BaPbO3 conductive thin films were deposited onto Al2O3 substrates by a modified sol-gel method using ethylene diamine tetra-acetic acid (EDTA), citric acid, and tartaric acid as the complex chelate agent. XRD, SEM, and EDS tests, together with resistivity date, show a good correlation among the Pb to Ba ratio, grain size, and sheet resistance. Experimental results demonstrate that BaPbO3 thin films with homogeneous composition can be prepared by the method mentioned above. Sheet resistance of BaPbO3 thin films decreases with Pb to Ba ratio or grain size increases. The influence of heat treatment on sheet resistance is related with the thickness of BaPbO3 thin films. The best electrical properties were obtained upon a rapid thermal anneal (RTA) at 700℃ for 10 min. Perovskite BaPbO3 films with sheet resistance of 5.86Ω·口-1 were derived from 20 spin-coating layers and annealed at 700℃ for 10min.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2007年第1期138-142,共5页 Journal of Inorganic Materials
基金 广东省自然科学基金(033177) 华南理工大学自然科学基金(040140)
关键词 BaPb03 陶瓷 薄膜 SOL-GEL 薄膜方阻 BaPbO3 ceramic thin film sol-gel sheet resistance
  • 相关文献

参考文献11

  • 1王歆,陆裕东,庄志强.钙钛矿结构导电陶瓷的导电性及其掺杂影响[J].材料导报,2005,19(7):24-28. 被引量:9
  • 2Shannon R D, Bierstedt P E. J. Am. Ceram. Soc., 1970,11 (53): 635-636.
  • 3Sleight A W, Gillson J L, Bierstedt P E. Solid State Commun., 1975, 17 (1): 27-28.
  • 4Cava R J, Batlogg B, Karjewski J J, et al. Nature, 1988,336 (6196): 814-817.
  • 5Luo Y R, Wu J M. Appl. Phys. Lett., 2001, 79 (22):3669-3671.
  • 6Liang C S, Wu J M, Chang M C. Appl. Phys. Lett., 2002,81 (4): 3624-3626.
  • 7Luo Y R, Wu J M. Jpn. J. Appl. Phys., 2003, 42 (1):242-246.
  • 8Hiremath B V, Newnham R E, Cross L E. J. Am. Ceram. Sac., 1992, 75 (11): 2953-2958.
  • 9Kao W H, Haberrichter S L, Bullock K R. J. Electrochem. Sac., 1992, 139 (11). L105-L107.
  • 10刘远良,杜丕一,翁文剑,韩高荣,沈鸽.热处理条件对sol-gel法Pb_(0.4)Sr_(0.6)TiO_3薄膜形成影响的研究[J].无机材料学报,2005,20(1):151-157. 被引量:5

二级参考文献55

  • 1Knauss L A, Pond J M, Horwitz S J, et al. Appl. Phys. Lett., 1996, 69: 25-27.
  • 2Cole M W, Joshi P C, Ervin M H, et al. Thin Solid Films, 2000, 374: 34-41.
  • 3Joshi P C, Cole M W. Appl. Phys. Lett., 2000, 77: 289-291.
  • 4Yoshitaka Somiya, Amar S Bhalla, L Eric Cross. Inter. J. of Inorg. Mater., 2001, 3: 709-714.
  • 5Chung H J, Woo S I. J. Vac. Sci. Technol., 2001, B 19: 275-280.
  • 6Wu Wenbiao, Peng Dongwen, Meng Zhongyan, et al. Applications of Ferroelectrics, 2002, 13th IEEE Proc.ISAF: 211-214.
  • 7Tahan Danielle M, Safari Ahmad, Klein Lisa C. J. Am. Cera. Soc, 1996, 79 (6): 1593-1598.
  • 8Nayak M, Tseng Tseung Yuen. Thin Solid Films, 2002, 408: 194-199.
  • 9Kim Kyoung T, Kim Chang I. Thin Solid Films, 2002, 420-421: 544-547.
  • 10Mullin I W. Crystallization, 3nd ed. Oxford: Butterworth-Heinemann, 1993. 172-179.

共引文献15

同被引文献51

引证文献7

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部