期刊文献+

CMOS LC VCO中交叉耦合MOS管的结构和特点 被引量:2

Structure and Feature of Cross-Coupled MOS FET in CMOS LC VCO
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摘要 在近年来的文献报道中,CMOS LC VCO中交叉耦合MOS管的电路结构变化多端。在不同的设计中,MOS管的类型、数目和连接方式有很多不同的结构。从其基本结构出发总结这些结构,就不同结构MOS管电路对振荡器性能做了简要分析。着重介绍了近年来在理论认识,低电压、低相位噪声和宽频率覆盖设计方面所做的努力。 MOS transistors made up various structures in the recent reported CMOS LC VCO designs with different types, numbers and topologies. The attempt to summarize and classify these structures was carried out to show the characteristic of each topology. The current progress in the knowledge of this type circuit and the modified topologies for the designs of the low voltage, low phase noise and broadband applications were illustrated.
出处 《半导体技术》 CAS CSCD 北大核心 2007年第1期21-25,共5页 Semiconductor Technology
基金 国家自然科学基金资助项目(60475018 60372021) 国家重点基础研究发展(973)计划资助项目(G2000036508)
关键词 互补金属氧化物半导体 电感电容压控振荡器 交叉耦合 低电压 宽频带 CMOS LC VCO cross-coupled low voltage broadband
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参考文献27

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共引文献17

同被引文献10

  • 1谢海情,曾健平,刘嘉晗,叶英.CMOS集成压控振荡器设计[J].宇航计测技术,2006,26(2):47-50. 被引量:2
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  • 9付丽.超低相位噪声LC压控振荡器的设计[J].半导体技术,2009,34(2):185-188. 被引量:4
  • 10王云峰,叶青,满家汉,叶甜春.宽带低相噪CMOS LC VCO的设计[J].固体电子学研究与进展,2009,29(4):511-514. 被引量:2

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