摘要
以横向扩散金属氧化物半导体(LDMOS)场效应管射频功率放大器为例,介绍了LDMOS FET电热效应模型,理论推导了LDMOS FET的结温与其耗散功率的量化关系。
Taking LDMOS RF power amplifier as example, electro-thermal model of LDMOS FET was introduced. The quantificational relation of chip temperature and instantaneous dissipative power of LDMOS FET in theory was derived. The cause of the electro-thermal effect of the amplifier was revealed. The results of the simulations and experiments demonstrated the influences of electrothermal memory effect on the RFPA＇ s performances, based on this general methods for reducing the memory effect are proposed.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第1期33-36,共4页
Semiconductor Technology
基金
高等学校博士学科点专项科研基金资助项目(20030013010)
