ICP刻蚀机反应腔室气流仿真研究

Gas Flow Simulation Research on Reaction Chamber of ICP Etcher

感应耦合等离子体（ICP）刻蚀机反应腔室的气流分布是影响等离子体分布与刻蚀工艺均匀性的重要原因之一。使用商业软件CFD—ACE＋中的连续流体与热传递模型，对反应腔室中气流分布进行了仿真研究，讨论了不同质量流量（50—250cm^3／rain）入口条件下电极表面附近气压分布情况，同时讨论了不同腔室高度（H=0．08，0．12，0．14m）对气流分布均匀性的影响。研究发现电极表面附近气压分布呈现中心高边缘低的特征，并随入口质量流量的增加而升高；气流分布均匀性随腔室高度增加而有所提高，而同时平均密度却会下降。通过对比发现3D与2D模型仿真结果基本一致。

Gas flow distribution of reaction chamber of inductively coupled plasma （ICP） etcher is usually considered to be a main factor in determining beth the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, CFD-ACE ＋ , the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow （50 - 250cm^3/min） inlet conditions, and the influence of the different heights （ H = 0.08, 0.12, 0.14m） of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the height of the chamber while the average density decreases. A comparison of the simulation results between 3D and 2D models indicates a well agreement.