摘要
采用光偏振相移干涉原理测量了硅基上不同钝化层下铝膜应力的变化。研究表明:不同的钝化层对铝膜的应力影响不同。SiO2钝化层下的铝膜应力最小,而钝化层为聚酰亚胺的铝膜应力最大。200℃下退火4 h后,应力减小明显,且分布趋向均匀。同时采用有限元法对不同钝化层的铝膜进行了应力模拟,模拟结果与实验结果相符。
The effect of passivation layer by measuring stress was investigated. Stress of aluminium film with different passivation was studied with optical phase-shift technique by measuring and simulation.The results show that stress of film changes with passivation. The stress of aluminium film under Si02 passivation layer is the lowest, but the stress under polyimides passivation layer is the highest. After 4 h anneal at 200 ℃. The stress decreases remarkably and presents an even distribution. The finite element simulation results consist with the above viewpoint.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第1期47-51,共5页
Semiconductor Technology
基金
电子元器件可靠性物理及应用技术国防科技重点实验室资助项目(51433020305QT0101)
北京工业大学第四届研究生科技基金资助(ykj-2005-096)
关键词
钝化层
光学相移法
应力
passivation layer
optical phase shift technology
stress
