GaN金属-半导体-金属紫外光电探测器的研制

The Research and Fabrication of GaN Metal-semiconductor-metal Photodetector

用金属有机物化学汽相沉积(MOCVD)方法在蓝宝石衬底上制备了GaN单晶薄膜,并对样品进行X射线衍射和光致发光谱测量.利用GaN样品成功地制备了金属-半导体-金属(MSM)结构GaN紫外光电探测器,并对其I-V特性、光谱响应及击穿电压等性能进行测试和分析.结果表明,探测器在-5 V偏压下的光电流与暗电流之比大于400倍;探测器光响应在352 nm附近达到响应峰值,并在364 nm附近出现截止,即具备可见盲特性;器件的光响应度最好达0.21A/W.

The GaN epilayers were grown by metal organic chemical vapor deposition （MOCVD） method. X-ray diffraction and photoluminescence technique were used to study the quality of our GaN films. The GaN UV photodetectors with MSM structure were fabicated. The I-V characteristic and UV photoresponsivity of the detectors were also investigated. The results show that the radio of photocurrent to dark current is greater than 400,detectors show a peak at about 352 nm,and show a cutoff for wavelength longer than 364 nm,i. e. the detectors have the visble-blind characteristic. The responsitivity of our device reach 0.21 A/W.