溶胶凝胶法制备Sb掺杂SnO_2透明导电膜的结构与性能研究

Structure and Properties of Sb-doped SnO_2 Transparent and Conductive Thin Films Prepared by Sol-gel Process

在乙醇溶剂中,以无机金属盐SnCl2.2H2O和SbCl3为原料,采用溶胶-凝胶法制备了Sb掺杂的SnO2透明导电薄膜(ATO),研究了Sb掺杂量和热处理温度对薄膜结构和性能的影响。结果表明,热处理温度为500℃、Sb掺杂摩尔百分比为15%～20%时,薄膜具有较好的结晶性能、好的导电性能、较高的可见光区透射率和红外光区反射率。

Using metal salts SnCl2 · 2H2O and SbCl3 as precursors, ethanol as solvent, the Sb-doped SnO2 transparent and conductive thin films have been prepared by the sol-gel method to analyze the effect of dopant amount and heat-treatment temperature on the structure and properties of the films. It shows that films with good crystallinity were grown and films have favorable electrical conductivity and higher visible transmittance and high infrared reflectance with dopant amount of 15% -20% at the heat-treatment temperature of 500℃.