期刊文献+

快速热处理法制备单晶硅太阳能电池 被引量:1

Monocrystalline silicon solar cells fabricated by rapid thermal processing
下载PDF
导出
摘要 利用快速热处理(RapidThermalProcessing,RTP)技术,成功制备了单晶硅太阳电池。在三个重要的热处理环节(磷扩散制作P-N结、热氧化、电极烧结)采用了快速热处理法,电极制作采用了丝网印刷。初步研究,用大面积的单晶硅片制备出转换效率为11%、开路电压为564.6mV、短路电流密度为30.7mA/cm2的太阳电池。 Monocrystalline silicon solar cells were successfully fabricated by rapid thermal processing(RTP) technique,which include rapid thermal phosphorus diffusion,oxidation and metallization.The initial work has resulted in a 62 cm2 cell with conversion efficiency of 11% ,open voltage of 564.6 mV and short current density of 30.7 mA/cm2 on 1 Ω·cm Cz Si using rapid thermal processing technique and screen-printing (SP) technique for the front and back contacts.
出处 《材料热处理学报》 EI CAS CSCD 北大核心 2006年第6期10-13,共4页 Transactions of Materials and Heat Treatment
基金 国家"十五"科技攻关计划(2004BA410A02) 教育部留学回国人员基金 浙江省自然基金项目(Y105468)
关键词 快速热处理(RTP) 太阳电池 rapid thermal processing silicon solar cells
  • 相关文献

参考文献19

  • 1Campbell R B,Meier D L,Simultaneous junction formation using a directed energy light source[J].J Electrochem Soc,1986,133(10):2210-2211.
  • 2Rohatgi A,Chen Z,Doshi P,et al.High-efficiency silicon solar cells by rapid thermal processing[J].Appl Phys Lett,1994,65(16):2087-2089.
  • 3Beyer A,Ebest G,Reich R.Metal-insulator-semiconductor solar cells with silicon oxynitrde tunnel insulator by using rapid thermal processing[ J].Appl Phys Lett,1996,68(4):508-510.
  • 4Doshi P,Rohatgi A.18% efficient silicon photovoltaic devices by rapid thermal diffusion and oxidation[ J].Electron Devices,IEEE Transactions,1998,45 (8):1710-1716.
  • 5Stefan Peters,Christophe Ballif,Dietmar Borchert,et al.Record fast thermal processing of 17.5% efficient silicon solar cells[ J ].Semicond Sci Technol,2002,17:677-681.
  • 6Rohatgi A,Kim K S,Nakayashiki K,et al.High-efficiency solar cells on edge-defined film-fed grown(18.2%) and string ribbon(17.8%) silicon by rapid thermal processing[ J].Appl Phys Lett,2004,84(1):145-147.
  • 7查超麟,刘祖明,陈庭金,李景天,张忠文.RTP硅太阳电池的研究进展[J].云南师范大学学报(自然科学版),2003,23(4):25-33. 被引量:2
  • 8Grabiec P B,Zagozdzon-Wosik W,Lux G.Kinetics of phosphorus proximity rapid thermal diffusion using spin-on dopant source for shallow junctions fabrication[J].J Appl Phys,1995,78(1):204-211.
  • 9Singh R,Cherukuri K C,Vedula L,et al.Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing[ J ].Appl Phys Lett,1997,70 (13):1700-1702.
  • 10Vittorio Privitera,Francesco Priolo,Giovanni Mannino,et al.The effect of reactive plasma etching on the transient enhanced diffusion of boron in silicon[ J].Appl Phys Lett,1997,71 (13):1834-1836.

二级参考文献47

  • 1B. Lojek, Early history of rapid thermal processing [C]. Paper originally presented at RTP' 99 in Colorado Springs,September 9, 1999.
  • 2Marcel Lefrancois and Dave Camm Vortek Industries Ltd. Temperature uniformity during impulse^TM anneal[C]. 8th International Conference on Advanced Thermal Processing of Semiconductors RTP' 2000[C]Gaithersburg, Maryland, September 20--22, 2000.
  • 3Bruce Peuse, Gary Miner, Mark Yam, et al. , Advances in RTP temperature measurement control[C]. Presented at Materials Research Society Symposium -- Spring 98.
  • 4D. M. Camm and B. Lojek, High power arc lamp RTP system for high temperature annealing applications[C]. Paper Presented at 2nd International Rapid Thermal Conference, 1994.
  • 5[美]施敏,超大规模集成电路技术[M].北京:科学出版社,1987.
  • 6A. Rohatgi, P. Doshi, S. Kamra, Highest Efficiency RTP Solar Cells by Rapid Thermal Diffusion and Oxidation[C].Proc. on 14th EPVSEC, Barcelona, Spain, 30 June--4 July, 1997.
  • 7R. schindler, I. Reis, B. Wagner, et al. , Rapid optical thermal processing of silicon solar cells[C]. Proc. on 23rd IEEE--PVSC, Louisville, 1993, pp. 162--166.
  • 8B. Hartiti, A. shaoui, J. C. Muller, et al. , Multicrystalline Silcon Solar Cells Processed By Rapid Thermal Processing[C]. Proe. on 23rd IEEE--PVSC, Louisville, 1993,.
  • 9P. Doshi, A. Rohatgi, M. Ropp, et al. , Rapid Thermal Processing of High Efficiency silicon Solar Cells With Controlled in situ Annealing[C]. Proc. on24th IEEE--PVSC, 1994.
  • 10S. Sivoththaman, W. Laueys, P. De. Schepper, et al. , Large Area Silicon Solar Cells Fabricated by Rapid Thermal Processing[C]. Proc. on 13th EPVSEC, Nice, France, 1995.

共引文献6

同被引文献7

  • 1Xianrong C,Li Y S, Jiemin Z. Three dimensional simulation of melt flow in Czochralski crystal growth with steady magnetic fields [ J ]. Journal of Crystal Growth,2012,340 ( 1 ) : 135 - 141.
  • 2Bok-Cheol S,In-Kyoo L,Kwang-Hun K,et al. Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field[ J l-Journal of Crystal Growth ,2005,275 (3) : 455 - 459.
  • 3Young-ho H, Bok-cheol S,Kwang-bo S. Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals[ J]. Journal of Crystal Growth ,2006,295 (2) : 141 - 147.
  • 4Koichi K,Akimasa T, Hideo I, et al. Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields [ J ]. Materials Science in Semiconductor Processing,2002,5 (4) :341 - 345.
  • 5Lijun L, Koichi K. Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model [ J ]. International Journal of Heat and Mass Transfer,2005,48 (21) :4481 -4491.
  • 6Yoan C,Olivier M, Nathalie V B, et al. Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growth [ J ]. Journal of Crystal Growth ,2012,360 ( 1 ) :18 - 24.
  • 7周潘兵,柯航,周浪.热处理和冷却速率对直拉单晶硅少子寿命的影响[J].材料热处理学报,2012,33(8):23-27. 被引量:3

引证文献1

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部