Ni－Cr衬底上MOCVD法制备YSZ过渡层的研究

YSZ BUFFER LAYER ON Ni-Cr ALLOY SUBSTRATES GROWN BY MOCVD

用ＭＯＣＶＤ方法在柔性金属衬底上沉积超导膜是潜在的实用高温超导成材方法。用适当方法原位快速地制备有择优取向的防扩散过渡层是其中的关键。本文报导用有机源Ｙ（ｄｐｍ）_３和Ｚｒ（ｄｐｍ）_４，采用ＭＯＣＶＤ方法在Ｎｉ基合金衬底上沉积了Ｙ稳定的ＺｒＯ_２立方相过渡层，厚度约０．５μｍ。文中研究了氧分压和沉积温度对ＹＳＺ结晶和择优取向的影响。结果表明，在生长压力为１３０Ｐａ时，氧分压低至２０Ｐａ，制备出（１１１）取向为主的ＹＳＺ多晶膜，氧分压为５０～１００Ｐａ，则制备出（ｈ００）择优取向为主的ＹＳＺ膜。衬底温度太低，将导致ＹＳＺ膜质量变差。

Deposition of superconducting films on flexible metal substrates by MOCVD is one of the potential manufacture methods in practical use.The key problem therein is the preparation of textured buffer layers by a proper fast method.In this paper,the deposition of YSZ buffer layer with a thickness of about 0.5μm on Ni based alloy substrates by the use of Y(dpm)_3 and Zr(dpm)_4 organic sources was reported.The influences of the partial pressure of oxygen and the deposition temperatures on the crystallinity of YSZ as well as its texture were studied. It was shown that when the vacuum of the growth chamber was kept at～130Pa and it s oxygen partial pressure kept at￣20Pa, the deposited polycrystalline YSZ film has a strong(111)texture.But when oxygen partial pressure was increased to 50～100Pa,the texture changed to(100).It was also shown that the quality of YSZ film is dependent on the substrate temperature,lower(<700℃)temperature would lead to poor quality.